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Performance of InAsSb-based Infrared Detectors with nBn Design

Identifieur interne : 003B35 ( Main/Repository ); précédent : 003B34; suivant : 003B36

Performance of InAsSb-based Infrared Detectors with nBn Design

Auteurs : RBID : Pascal:11-0308265

Descripteurs français

Pascal (Inist)
- Détecteur rayonnement, Détecteur IR, Effet concentration, Télédétection, Fonction réponse, Composé binaire, Indium Arséniure, Arséniure d'aluminium, InAs, As In, AlAs, 0130C, 0757K, Détectivité.
Wicri :
- concept : Télédétection.

English descriptors

KwdEn :
- Aluminium arsenides, Binary compounds, Detectivity, Indium Arsenides, Infrared detectors, Quantity ratio, Radiation detectors, Remote sensing, Response functions.

Abstract

Our group is investigating nBn detectors based on bulk InAs_(1-x)Sb_(x) absorber (n) and contacts (n) with an AlAs_(1-x)Sb_(x) barrier (B). The wide-band-gap barrier material exhibits a large conduction band offset and small valence band offset with respect to the narrow-band-gap absorber material. An important matter to explore in this design is the barrier parameters (material, composition and doping concentration) and how they effect the operation of the device. This paper investigates AlAs_(1-x)Sb_(x) barriers with different compositions and doping levels and their effect on detector characteristics, in particular, dark current density, responsivity and specific detectivity.

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Performance of InAsSb-based Infrared Detectors with nBn Design</title>
<author><name sortKey="Myers, S A" uniqKey="Myers S">S. A. Myers</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM, 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Albuquerque, NM, 87106</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Khoshakhlagh, A" uniqKey="Khoshakhlagh A">A. Khoshakhlagh</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM, 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Albuquerque, NM, 87106</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mailfert, J" uniqKey="Mailfert J">J. Mailfert</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Institute of Applied Sciences</s1>
<s2>Rennes</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Région Bretagne</region>
<settlement type="city">Rennes</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Wanninkhof, P" uniqKey="Wanninkhof P">P. Wanninkhof</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>University of Florida</s1>
<s2>Gainesville, FL, 32611</s2>
<s3>USA</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>University of Florida</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Plis, E" uniqKey="Plis E">E. Plis</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM, 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Albuquerque, NM, 87106</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kutty, M N" uniqKey="Kutty M">M. N. Kutty</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM, 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Albuquerque, NM, 87106</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kim, H S" uniqKey="Kim H">H. S. Kim</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM, 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Albuquerque, NM, 87106</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gautam, N" uniqKey="Gautam N">N. Gautam</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM, 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Albuquerque, NM, 87106</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Klein, B" uniqKey="Klein B">B. Klein</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM, 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Albuquerque, NM, 87106</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Smith, E P G" uniqKey="Smith E">E. P. G. Smith</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Raytheon Vision Systems</s1>
<s2>Goleta, CA</s2>
<s3>USA</s3>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Raytheon Vision Systems</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Krishna, S" uniqKey="Krishna S">S. Krishna</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM, 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Albuquerque, NM, 87106</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0308265</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 11-0308265 INIST</idno>
<idno type="RBID">Pascal:11-0308265</idno>
<idno type="wicri:Area/Main/Corpus">002F01</idno>
<idno type="wicri:Area/Main/Repository">003B35</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0277-786X</idno>
<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
<title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term>
<term>Binary compounds</term>
<term>Detectivity</term>
<term>Indium Arsenides</term>
<term>Infrared detectors</term>
<term>Quantity ratio</term>
<term>Radiation detectors</term>
<term>Remote sensing</term>
<term>Response functions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Détecteur rayonnement</term>
<term>Détecteur IR</term>
<term>Effet concentration</term>
<term>Télédétection</term>
<term>Fonction réponse</term>
<term>Composé binaire</term>
<term>Indium Arséniure</term>
<term>Arséniure d'aluminium</term>
<term>InAs</term>
<term>As In</term>
<term>AlAs</term>
<term>0130C</term>
<term>0757K</term>
<term>Détectivité</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Télédétection</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Our group is investigating nBn detectors based on bulk InAs<sub>(1-x)</sub>
Sb<sub>(x)</sub>
 absorber (n) and contacts (n) with an AlAs<sub>(1-x)</sub>
Sb<sub>(x)</sub>
 barrier (B). The wide-band-gap barrier material exhibits a large conduction band offset and small valence band offset with respect to the narrow-band-gap absorber material. An important matter to explore in this design is the barrier parameters (material, composition and doping concentration) and how they effect the operation of the device. This paper investigates AlAs<sub>(1-x)</sub>
Sb<sub>(x)</sub>
 barriers with different compositions and doping levels and their effect on detector characteristics, in particular, dark current density, responsivity and specific detectivity.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0>
</fA01>
<fA02 i1="01"><s0>PSISDG</s0>
</fA02>
<fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0>
</fA03>
<fA05><s2>7808</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Performance of InAsSb-based Infrared Detectors with nBn Design</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Infrared remote sensing and instrumentation XVIII : 1-3 August 2010, San Diego, California, United States</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>MYERS (S. A.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KHOSHAKHLAGH (A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MAILFERT (J.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>WANNINKHOF (P.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>PLIS (E.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>KUTTY (M. N.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>KIM (H. S.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>GAUTAM (N.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>KLEIN (B.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>SMITH (E. P. G.)</s1>
</fA11>
<fA11 i1="11" i2="1"><s1>KRISHNA (S.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>STROJNIK (Marija)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>PAEZ (Gonzalo)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico</s1>
<s2>Albuquerque, NM, 87106</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>11 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>National Institute of Applied Sciences</s1>
<s2>Rennes</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>University of Florida</s1>
<s2>Gainesville, FL, 32611</s2>
<s3>USA</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Raytheon Vision Systems</s1>
<s2>Goleta, CA</s2>
<s3>USA</s3>
<sZ>10 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>SPIE</s1>
<s3>USA</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s2>780805.1-780805.9</s2>
</fA20>
<fA21><s1>2010</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA25 i1="01"><s1>SPIE</s1>
<s2>Bellingham WA</s2>
</fA25>
<fA26 i1="01"><s0>978-0-8194-8304-1</s0>
</fA26>
<fA43 i1="01"><s1>INIST</s1>
<s2>21760</s2>
<s5>354000174720940030</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>15 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0308265</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Our group is investigating nBn detectors based on bulk InAs<sub>(1-x)</sub>
Sb<sub>(x)</sub>
 absorber (n) and contacts (n) with an AlAs<sub>(1-x)</sub>
Sb<sub>(x)</sub>
 barrier (B). The wide-band-gap barrier material exhibits a large conduction band offset and small valence band offset with respect to the narrow-band-gap absorber material. An important matter to explore in this design is the barrier parameters (material, composition and doping concentration) and how they effect the operation of the device. This paper investigates AlAs<sub>(1-x)</sub>
Sb<sub>(x)</sub>
 barriers with different compositions and doping levels and their effect on detector characteristics, in particular, dark current density, responsivity and specific detectivity.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B00A30C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B00G57K</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Détecteur rayonnement</s0>
<s5>09</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Radiation detectors</s0>
<s5>09</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Détecteur IR</s0>
<s5>11</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Infrared detectors</s0>
<s5>11</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Effet concentration</s0>
<s5>30</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Quantity ratio</s0>
<s5>30</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Télédétection</s0>
<s5>31</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Remote sensing</s0>
<s5>31</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Fonction réponse</s0>
<s5>41</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Response functions</s0>
<s5>41</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Arséniure d'aluminium</s0>
<s2>NK</s2>
<s5>61</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Aluminium arsenides</s0>
<s2>NK</s2>
<s5>61</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>As In</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>AlAs</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>0130C</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>0757K</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Détectivité</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Detectivity</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>213</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Infrared remote sensing and instrumentation</s1>
<s2>18</s2>
<s3>San Diego CA USA</s3>
<s4>2010</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Performance of InAsSb-based Infrared Detectors with nBn Design

Performance of InAsSb-based Infrared Detectors with nBn Design

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